The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2016
Filed:
May. 19, 2014
Avalanche Technology Inc., Fremont, CA (US);
Zihui Wang, Milpitas, CA (US);
Xiaobin Wang, Fremont, CA (US);
Huadong Gan, Fremont, CA (US);
Yuchen Zhou, San Jose, CA (US);
Yiming Huai, Pleasanton, CA (US);
Avalanche Technology, Inc., Fremont, CA (US);
Abstract
The present invention is directed to a magnetic random access memory comprising a first magnetic tunnel junction (MTJ) including a first magnetic reference layer and a first magnetic free layer with a first insulating tunnel junction layer interposed therebetween; a second MTJ including a second magnetic reference layer and a second magnetic free layer with a second insulating tunnel junction layer interposed therebetween; and an anti-ferromagnetic coupling layer formed between the first and second variable magnetic free layers. The first and second magnetic free layers have a first and second magnetization directions, respectively, that are perpendicular to the layer planes thereof. The first magnetic reference layer has a first pseudo-fixed magnetization direction substantially perpendicular to the layer plane thereof. The second magnetic reference layer has a second pseudo-fixed magnetization direction that is substantially perpendicular to the layer plane thereof and is substantially opposite to the first pseudo-fixed magnetization direction.