The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 09, 2017

Filed:

Aug. 20, 2015
Applicant:

Avalanche Technology, Inc., Fremont, CA (US);

Inventors:

Xiaobin Wang, Fremont, CA (US);

Parviz Keshtbod, Los Altos Hills, CA (US);

Kimihiro Satoh, Fremont, CA (US);

Zihui Wang, Milpitas, CA (US);

Huadong Gan, Fremont, CA (US);

Assignee:

Avalanche Technology, Inc., Fremont, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/22 (2006.01); H01L 43/08 (2006.01);
U.S. Cl.
CPC ...
H01L 27/228 (2013.01); H01L 43/08 (2013.01);
Abstract

The present invention is directed to a spin-orbitronics device including a magnetic comparison layer structure having a pseudo-invariable magnetization direction; a magnetic free layer structure whose variable magnetization direction can be switched by a switching current passing between the magnetic comparison layer structure and the magnetic free layer structure; an insulating tunnel junction layer interposed between the magnetic comparison layer structure and the magnetic free layer structure; and a non-magnetic transverse polarizing layer formed adjacent to the magnetic comparison layer structure. The pseudo-invariable magnetization direction of the magnetic comparison layer structure may be switched by passing a comparison current through the transverse polarizing layer along a direction that is substantially parallel to a layer plane of the transverse polarizing layer. The pseudo-invariable magnetization direction of the magnetic comparison layer structure is not switched by the switching current. The variable magnetization direction of the magnetic free layer structure is not switched by the comparison current.


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