The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2025
Filed:
Sep. 26, 2022
Avalanche Technology, Inc., Fremont, CA (US);
Zhiqiang Wei, Pleasanton, CA (US);
Zihui Wang, Mountain View, CA (US);
Avalanche Technology, Inc., Fremont, CA (US);
Abstract
The present invention is directed to a memory cell including first and second unidirectional selectors coupled in parallel to a nonvolatile memory element. Each of the first and second unidirectional selectors includes first, second, and third electrode layers; a first insulator layer interposed between the first and second electrode layers; and a second insulator layer interposed between the second and third electrode layers. The first insulator layer of the first unidirectional selector includes therein a permanent conductive path and the second insulator layer of the first unidirectional selector is operable to form therein a volatile conductive path upon application of a potential across the first unidirectional selector. The second insulator layer of the second unidirectional selector includes therein another permanent conductive path and the first insulator layer of the second unidirectional selector is operable to form therein another volatile conductive path upon application of another potential across the second selector.