The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 2023
Filed:
Jan. 09, 2013
Yiming Huai, Pleasanton, CA (US);
Yuchen Zhou, San Jose, CA (US);
Jing Zhang, Los Altos, CA (US);
Roger Klas Malmhall, San Jose, CA (US);
Ioan Tudosa, Milpitas, CA (US);
Rajiv Yadav Ranjan, San Jose, CA (US);
Yiming Huai, Pleasanton, CA (US);
Yuchen Zhou, San Jose, CA (US);
Jing Zhang, Los Altos, CA (US);
Roger Klas Malmhall, San Jose, CA (US);
Ioan Tudosa, Milpitas, CA (US);
Rajiv Yadav Ranjan, San Jose, CA (US);
Avalanche Technology, Inc., Fremont, CA (US);
Abstract
A spin-transfer torque magnetic random access memory (STTMRAM) element employed to store a state based on the magnetic orientation of a free layer, the STTMRAM element is made of a first perpendicular free layer (PFL) including a first perpendicular enhancement layer (PEL). The first PFL is formed on top of a seed layer. The STTMRAM element further includes a barrier layer formed on top of the first PFL and a second perpendicular reference layer (PRL) that has a second PEL. The second PRL is formed on top of the barrier layer. The STTMRAM element further includes a capping layer that is formed on top of the second PRL.