Jinde Gao

Title: Jinde Gao: Innovator in Failure Analysis Methods

Introduction

Jinde Gao is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of failure analysis, particularly in locating defects in metal layers. With a total of 3 patents to his name, Gao's work has advanced the understanding and methodologies used in semiconductor technology.

Latest Patents

Gao's latest patents include innovative methods for failure analysis. One notable patent is the "Method of failure analysis for defect locations," which outlines a systematic approach to identify open circuit defects in metal layers. This method involves providing a chip sample, delaminating it to expose the metal layer, and conducting a voltage contrast analysis to determine the defect's position. Another significant patent is the "Method for locating open circuit failure point of test structure." This patent describes a process for identifying open circuit failure points in test structures through a series of active voltage contrast tests and marking techniques.

Career Highlights

Throughout his career, Jinde Gao has worked with notable companies such as Shanghai Huali Integrated Circuit Corporation and Shanghai Huali Microelectronics Corporation. His experience in these organizations has allowed him to refine his skills and contribute to various projects in the semiconductor industry.

Collaborations

Gao has collaborated with several professionals in his field, including Qiang Chen and Cheng Wu. These collaborations have fostered a productive environment for innovation and have led to advancements in failure analysis techniques.

Conclusion

Jinde Gao's contributions to the field of failure analysis are noteworthy, with his innovative methods enhancing the understanding of defect locations in semiconductor technology. His work continues to influence the industry and pave the way for future advancements.