The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 13, 2026

Filed:

Apr. 23, 2024
Applicant:

Shanghai Huali Microelectronics Corporation, Shanghai, CN;

Inventors:

Yunong Sun, Shanghai, CN;

Cheng Wu, Shanghai, CN;

Shuqing Duan, Shanghai, CN;

Jinde Gao, Shanghai, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/31 (2006.01); H01J 37/08 (2006.01); H01J 37/26 (2006.01); H01J 37/305 (2006.01); H01J 37/317 (2006.01);
U.S. Cl.
CPC ...
H01J 37/305 (2013.01); H01J 37/08 (2013.01); H01J 37/26 (2013.01); H01J 37/317 (2013.01); H01J 2237/31745 (2013.01); H01J 2237/31749 (2013.01);
Abstract

This application discloses a nanoscale failure analysis method, including step 1: placing a first sample to be analyzed on a sample stage of an FIB machine, and performing cutting on a selected area of the first sample by using an ion beam in the FIB machine to form a first cross section and expose a metal pattern on the first cross section; step 2: depositing a protective layer on the first cross section by using an electron beam of the FIB machine; step 3: transferring the first sample to a nano prober, the protective layer being used for protecting the metal pattern and preventing metal diffusion in a transfer process; step 4: performing surface micro treatment on the first sample by using an ion source in the nano prober to remove the protective layer; step 5: performing probing on the metal pattern and implementing electrical testing through the nano prober.


Find Patent Forward Citations

Sun, Yunong. (2026). Nanoscale failure analysis method (U.S. Patent No. 12763285). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12763285

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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