The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 24, 2025

Filed:

Feb. 16, 2023
Applicant:

Shanghai Huali Integrated Circuit Corporation, Shanghai, CN;

Inventors:

Qiang Chen, Shanghai, CN;

Jinde Gao, Shanghai, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 1/36 (2006.01); G01N 23/04 (2018.01); H01J 37/31 (2006.01); H01J 37/317 (2006.01);
U.S. Cl.
CPC ...
G01N 1/36 (2013.01); G01N 23/04 (2013.01); H01J 37/3178 (2013.01); G01N 2001/366 (2013.01); G01N 2223/6116 (2013.01); H01J 2237/31749 (2013.01);
Abstract

A method of failure analysis for locating open circuit defect in a metal layers, comprising: providing a chip sample having a metal layer, with an open circuit defect; delaminating the chip to expose the metal layer; depositing a metal conductive layer on the metal layer; removing a portion of the metal conductive layer to expose the metal layer; depositing a non-conductive protective layer to cover the exposed metal layer and any remaining portions of the metal conductive layer; preparing a TEM slice sample which comprises the metal layer, the remaining portions of the metal conductive layer, and the non-conductive protective layer; performing a VC analysis on the TEM slice sample to determine the defect position of the open circuit defect; and analyzing the defect position of the open circuit defect.


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