The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 17, 2026

Filed:

Jan. 06, 2023
Applicant:

Shanghai Huali Integrated Circuit Corporation, Shanghai, CN;

Inventors:

Qiang Chen, Shanghai, CN;

Liu Chen, Shanghai, CN;

Jinde Gao, Shanghai, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J 37/31 (2006.01); G01N 1/28 (2006.01); G01N 23/2202 (2018.01); H01J 37/317 (2006.01);
U.S. Cl.
CPC ...
H01J 37/31 (2013.01); H01J 37/3178 (2013.01); H01J 2237/31749 (2013.01);
Abstract

The present application discloses a method for preparing a TEM sample, comprising: step, step, providing a chip sample having a metal protective layer formed on a first surface; step, fixing the chip sample on a sample table of a FIB system; step, performing the first time of FIB cutting on the metal protective layer along a first direction, so as to form a groove, wherein the first direction is the width direction of the TEM sample, and the inner side surface of the groove is arc-shaped so that the thickness of the metal protective layer in a groove area gradually changes; and step, performing the second time of FIB cutting along a third direction to thin the chip sample and form the TEM sample, wherein the third direction is a direction from the metal protective layer to the chip sample.


Find Patent Forward Citations

Chen, Qiang. (2026). Method for preparing tem sample (U.S. Patent No. 12580151). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12580151

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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