The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 23, 2025
Filed:
Aug. 21, 2023
Shanghai Huali Integrated Circuit Corporation, Shanghai, CN;
Lingye Yang, Shanghai, CN;
Jinde Gao, Shanghai, CN;
Shanghai Huali Integrated Circuit Corporation, Shanghai, CN;
Abstract
The present application provides a failure analysis and location method for a short circuit structure. a first layer metal wire structure and a second layer metal wire structure located above the first layer metal wire structure, the first and second layer metal wire structures are connected by a first layer metal via located between the first and second layer metal wire structures; a second layer metal via located above the second layer metal wire structure and connected to the second layer metal wire structure. A VC anomaly in the semiconductor structure is roughly located to find a failure region. The failure region is plated with a conductive material layer to connect the second layer metal via to the conductive material layer, wherein when an abnormal VC is found at a position on the cross-section of the sample, a failure point at the position is accurately located.