Lingye Yang

Title: Lingye Yang: Innovator in Semiconductor Technology

Introduction

Lingye Yang is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on methods for analyzing and locating failures in short circuit structures, which are crucial for improving the yield of semiconductor devices.

Latest Patents

Lingye Yang's latest patents include innovative methods for failure analysis and location in semiconductor structures. One of his patents describes a failure analysis and location method for a short circuit structure. This method involves a first layer metal wire structure and a second layer metal wire structure, which are interconnected by metal vias. The invention allows for the accurate location of failure points when an abnormal voltage contrast (VC) is detected. Another patent outlines a method for positioning short circuit failures by measuring resistance between metal wires and utilizing a systematic approach to isolate and analyze the short circuit point. This method enhances the ability to locate defects at the nano ampere level, thereby improving semiconductor device yields.

Career Highlights

Throughout his career, Lingye Yang has worked with notable companies in the semiconductor industry, including Shanghai Huali Integrated Circuit Manufacturing Co., Ltd. and Shanghai Huali Integrated Circuit Corporation. His experience in these organizations has contributed to his expertise in semiconductor technology and innovation.

Collaborations

Lingye Yang has collaborated with several professionals in his field, including Hai'an Liu and Li Sun. These collaborations have further enriched his work and contributed to advancements in semiconductor technology.

Conclusion

Lingye Yang is a distinguished inventor whose work in semiconductor technology has led to significant advancements in failure analysis and short circuit detection methods. His contributions are vital for enhancing the efficiency and reliability of semiconductor devices.