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For the Inventor, By the Inventor

Suwon, South Korea

Jin-seong Heo

This inventor holds 38 USPTO granted patents and 4 published patent applications, primarily in Graphene Electronics. Top assignees: Samsung Electronics Co., Ltd., Seoul National University, Snu Rdb Foundation. Active years: 2011-2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jin-seong Heo. Retrieved from https://idiyas.com/inventor/jin-seong-heo-himyk81l

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 38 

% Patents Active = 94.7

Average Co-Inventor Count = 5.9

ph-index = 6

Forward Citations = 159(Granted Patents)


Location History:

  • Daejeon, KR (2011 - 2013)
  • Suwon-si, KR (2012 - 2016)
  • Seoul, KR (2014 - 2016)

Company Filing History:

goldMedal38 out of 132,108 
 
Samsung Electronics Co., Ltd.
 patents
silverMedal3 out of 1,791 
 
Seoul National University
 patents
bronzeMedal2 out of 549 
 
Snu Rdb Foundation
 patents
4. 1 out of 1,366 
 
Sungkyunkwan University
 patents
where one patent can have more than one assignee

Years Active: 2011-2016

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Areas of Expertise:
Graphene
Memory Device
Field Effect Transistor
Electronic Device
Fabrication Method
Inverter Logic
Tunable Barrier
Three-Dimensional Device
Alloy Catalyst
Magnetic Memory
Semiconductor Device
Magnetic Domain Wall
38 patents (USPTO):Explore Patents
1. 9525076 - Memory device using graphene as charge-trap layer and method of operating the same (2016-12-20),
2. 9515144 - Fin-type graphene device (2016-12-06),
3. 9455256 - Inverter including two-dimensional material, method of manufacturing the same and logic device including inverter (2016-09-27),
4. 9373685 - Graphene device and electronic apparatus (2016-06-21),
5. 9359211 - Methods of fabricating graphene using alloy catalyst (2016-06-07),
6. 9349802 - Memory devices including two-dimensional material, methods of manufacturing the same, and methods of operating the same (2016-05-24),
7. 9306021 - Graphene devices and methods of fabricating the same (2016-04-05),
8. 9306005 - Electronic device including graphene (2016-04-05),
9. 9299789 - Memory devices including graphene switching devices (2016-03-29),
10. 9281404 - Three-dimensional graphene switching device (2016-03-08),
11. 9257528 - Graphene electronic device and method of fabricating the same (2016-02-09),
12. 9184236 - Method of transferring graphene using trench and substrate for receiving graphene (2015-11-10),
13. 9166062 - Field effect transistor using graphene (2015-10-20),
14. 9142635 - Graphene electronic device and method of fabricating the same (2015-09-22),
15. 9136336 - Inverter logic devices including graphene field effect transistor having tunable barrier (2015-09-15),

Title: The Innovations of Jin-seong Heo in Graphene Technology

Introduction

Jin-seong Heo, based in Suwon-si, South Korea, has made significant contributions to the field of memory devices with a remarkable portfolio of 38 patents. His innovative work primarily focuses on leveraging graphene technology to enhance the performance and efficiency of electronic components.

Latest Patents

Heo's most recent patents showcase cutting-edge advancements in memory devices. One notable invention is the "Memory device using graphene as charge-trap layer and method of operating the same." This innovative graphene memory architecture features a source and drain set apart on a conductive semiconductor substrate, coupled with a graphene layer that serves as a charge-trap layer for effective charge storage. The design incorporates a Schottky barrier, facilitating optimal functionality and performance.

Another significant patent is the "Fin-type graphene device." This design includes a substrate, a vertically-oriented graphene channel layer, and a gate insulating layer that enhances the device's performance. With separate source and drain electrodes, this fin-type graphene device represents a leap forward in graphene application in electronics.

Career Highlights

Jin-seong Heo has had a distinguished career, collaborating with leading companies and institutions. He has worked with Samsung Electronics Co., Ltd., a global leader in technology, where he contributed to advancements in electronic devices. Additionally, Heo has been associated with the Seoul National University R&DB Foundation, enhancing research and development efforts in South Korea.

Collaborations

Throughout his career, Jin-seong Heo has worked alongside esteemed colleagues, including Hyun-jong Chung and Sun-ae Seo. These collaborations have fostered an environment of innovation, enabling the development of groundbreaking technologies in the field of graphene electronics.

Conclusion

Jin-seong Heo's dedication to innovation in graphene technology is evident through his numerous patents and collaborations. His contributions to the field of memory devices strengthen South Korea's reputation as a hub for technological advancement. As he continues to push the boundaries of graphene research, the impact of his inventions on the electronics industry will be profound and lasting.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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