The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2016
Filed:
Jun. 23, 2015
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Minhyun Lee, Yongin-si, KR;
Jaeho Lee, Seoul, KR;
Jin-seong Heo, Suwon-si, KR;
Kiyoung Lee, Seoul, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/16 (2006.01); H01L 29/786 (2006.01); H01L 29/423 (2006.01); H01L 29/778 (2006.01); H01L 29/06 (2006.01); H01L 29/165 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1606 (2013.01); H01L 29/0665 (2013.01); H01L 29/165 (2013.01); H01L 29/42356 (2013.01); H01L 29/778 (2013.01); H01L 29/78642 (2013.01); H01L 29/78684 (2013.01); H01L 29/78696 (2013.01); H01L 29/41775 (2013.01);
Abstract
Example embodiments relate to a fin-type graphene device. The fin-type graphene device includes a substrate, a graphene channel layer substantially vertical to the substrate, a gate insulating layer that covers one side surface of the graphene channel layer, a gate electrode on the gate insulating layer, and a source electrode and a drain electrode that are formed separately from each other on other side surface of the graphene channel layer.