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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9373685 B1

PDFFull Text
Date of Patent:
Jun. 21, 2016

Filed:

Feb. 14, 2014

Graphene device and electronic apparatus

Applicant:

Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;

Inventors:

Hyeon-jin Shin, Suwon-si, KR;

Kyung-eun Byun, Uijeongbu-si, KR;

Hyun-jae Song, Hwaseong-si, KR;

Seong-jun Park, Seoul, KR;

David Seo, Yongin-si, KR;

Yun-sung Woo, Yongin-si, KR;

Dong-wook Lee, Suwon-si, KR;

Jae-ho Lee, Seoul, KR;

Hyun-jong Chung, Hwaseong-si, KR;

Jin-seong Heo, Seoul, KR;

In-kyeong Yoo, Yongin-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Gyeonggi-do, KR;

Attorney:

Harness, Dickey & Pierce, P.L.C.

Primary Examiner:

Minh-Loan Tran

Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/16 (2006.01); H01L 51/00 (2006.01); H01L 51/42 (2006.01); H01L 51/50 (2006.01); H01L 51/05 (2006.01); H01L 29/786 (2006.01); H01L 31/028 (2006.01); H01L 33/34 (2010.01); H01L 31/08 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1606 (2013.01); H01L 29/786 (2013.01); H01L 29/78642 (2013.01); H01L 29/78684 (2013.01); H01L 31/028 (2013.01); H01L 31/08 (2013.01); H01L 33/34 (2013.01); H01L 51/0046 (2013.01); H01L 51/0504 (2013.01); H01L 51/0558 (2013.01); H01L 51/0566 (2013.01); H01L 51/428 (2013.01); H01L 51/50 (2013.01); H01L 51/057 (2013.01); H01L 51/0562 (2013.01);
Abstract

A graphene device and an electronic apparatus including the same are provided. According to example embodiments, the graphene device includes a transistor including a source, a gate, and a drain, an active layer through which carriers move, and a graphene layer between the gate and the active layer. The graphene layer may be configured to function both as an electrode of the active layer and a channel layer of the transistor.

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