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Hyeon-jin Shin

USPTO Granted Patents = 44 (Patent Applications = 4)

Average Co-Inventor Count = 4.1

ph-index = 7

Forward Citations = 209(Granted Patents)

Location History:

Gyeonggi-do, KR (2014)
Suwon-si, KR (2010 - 2022)

Company Filing History:

44 out of 131,906

Samsung Electronics Co., Ltd.

patents

2 out of 1,247

Sungkyunkwan University

where one patent can have more than one assignee

Years Active: 2010-2022

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Areas of Expertise:

Graphene Technology

Plasma Deposition

Transparent Electrodes

Graphene Laminate

Doped Graphene

High Frequency Circuits

Memory Devices

Carbon Nanotubes

Thin Film Transistors

Semiconductor Manufacturing

Nano Fabrication

Two-Dimensional Materials

44 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 11407637 - Direct graphene growing method (2022-08-09),

2. 11270881 - Plasma deposition method, plasma deposition apparatus and method of manufacturing semiconductor device (2022-03-08),

3. 11062818 - Stacking structure having material layer on graphene layer and method of forming material layer on graphene layer (2021-07-13),

4. 10723620 - Direct graphene growing method (2020-07-28),

5. 10177261 - Transparent electrode comprising doped graphene, process of preparing the same, and display device and solar cell comprising the electrode (2019-01-08),

6. 10099449 - Method of forming a substrate assembly (2018-10-16),

7. 10071913 - Graphene laminate and method of preparing the same (2018-09-11),

8. 9902619 - Graphene shell and process of preparing the same (2018-02-27),

9. 9887020 - Doped graphene, method of manufacturing the doped graphene, and a device including the doped graphene (2018-02-06),

10. 9738057 - Substrate assembly, method of forming the same, and electronic device including the same (2017-08-22),

11. 9670590 - Graphene pattern and process of preparing the same (2017-06-06),

12. 9595361 - Thin film structure including metal seed layer and method of forming oxide thin film on transparent conductive substrate by using the metal seed layer (2017-03-14),

13. 9576916 - High frequency circuit comprising graphene and method of operating the same (2017-02-21),

14. 9527742 - Graphene sheet and process of preparing the same (2016-12-27),

15. 9475703 - Graphene base and method of preparing the same (2016-10-25),

Title: Inventor Hyeon-jin Shin: Pioneering Innovations from Suwon-si, KR

Introduction: Hyeon-jin Shin is a visionary inventor hailing from Suwon-si, South Korea, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Hyeon-jin Shin holds several patents in the realm of electronics and telecommunications, showcasing his commitment to pushing the boundaries of what is possible in these industries.

Career Highlights: With a career spanning over two decades, Hyeon-jin Shin has worked tirelessly to develop cutting-edge solutions that have revolutionized the way we interact with technology on a daily basis.

Collaborations: Throughout his career, Hyeon-jin Shin has collaborated with leading tech companies and research institutions, pooling his expertise with other visionaries to create products that have left a lasting impact on society.

Conclusion: Hyeon-jin Shin's passion for innovation and his relentless drive to create a better future through technology make him a true pioneer in the world of inventions. His work continues to inspire generations of inventors to push the boundaries of what is possible.

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