logo

For the Inventor, By the Inventor

Suwon, South Korea

Hyeon-jin Shin

This inventor holds 44 USPTO granted patents and 4 published patent applications, primarily in Graphene Technology. Top assignees: Samsung Electronics Co., Ltd., Sungkyunkwan University, Yonsei University. Active years: 2010-2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hyeon-jin Shin. Retrieved from https://idiyas.com/inventor/hyeon-jin-shin

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 44 

% Patents Active = 77.3

Average Co-Inventor Count = 4.1

ph-index = 7

Forward Citations = 209(Granted Patents)


Location History:

  • Gyeonggi-do, KR (2014)
  • Suwon-si, KR (2010 - 2022)

Company Filing History:

goldMedal44 out of 132,108 
 
Samsung Electronics Co., Ltd.
 patents
silverMedal2 out of 1,357 
 
Sungkyunkwan University
 patents
bronzeMedal1 out of 1,486 
 
Yonsei University
 patents
where one patent can have more than one assignee

Years Active: 2010-2022

Loading Chart...
Areas of Expertise:
Graphene
Transparent Electrode
Doped Graphene
Semiconductor Device
Graphene Laminate
Memory Devices
High Frequency Circuit
Graphene Pattern
Carbon Nanotube
Thin Film Structure
Inverter
Graphene Device
44 patents (USPTO):Explore Patents
1. 11407637 - Direct graphene growing method (2022-08-09),
2. 11270881 - Plasma deposition method, plasma deposition apparatus and method of manufacturing semiconductor device (2022-03-08),
3. 11062818 - Stacking structure having material layer on graphene layer and method of forming material layer on graphene layer (2021-07-13),
4. 10723620 - Direct graphene growing method (2020-07-28),
5. 10177261 - Transparent electrode comprising doped graphene, process of preparing the same, and display device and solar cell comprising the electrode (2019-01-08),
6. 10099449 - Method of forming a substrate assembly (2018-10-16),
7. 10071913 - Graphene laminate and method of preparing the same (2018-09-11),
8. 9902619 - Graphene shell and process of preparing the same (2018-02-27),
9. 9887020 - Doped graphene, method of manufacturing the doped graphene, and a device including the doped graphene (2018-02-06),
10. 9738057 - Substrate assembly, method of forming the same, and electronic device including the same (2017-08-22),
11. 9670590 - Graphene pattern and process of preparing the same (2017-06-06),
12. 9595361 - Thin film structure including metal seed layer and method of forming oxide thin film on transparent conductive substrate by using the metal seed layer (2017-03-14),
13. 9576916 - High frequency circuit comprising graphene and method of operating the same (2017-02-21),
14. 9527742 - Graphene sheet and process of preparing the same (2016-12-27),
15. 9475703 - Graphene base and method of preparing the same (2016-10-25),

Title: Inventor Hyeon-jin Shin: Pioneering Innovations from Suwon-si, KR

Introduction: Hyeon-jin Shin is a visionary inventor hailing from Suwon-si, South Korea, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Hyeon-jin Shin holds several patents in the realm of electronics and telecommunications, showcasing his commitment to pushing the boundaries of what is possible in these industries.

Career Highlights: With a career spanning over two decades, Hyeon-jin Shin has worked tirelessly to develop cutting-edge solutions that have revolutionized the way we interact with technology on a daily basis.

Collaborations: Throughout his career, Hyeon-jin Shin has collaborated with leading tech companies and research institutions, pooling his expertise with other visionaries to create products that have left a lasting impact on society.

Conclusion: Hyeon-jin Shin's passion for innovation and his relentless drive to create a better future through technology make him a true pioneer in the world of inventions. His work continues to inspire generations of inventors to push the boundaries of what is possible.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…