The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2020
Filed:
May. 07, 2012
Applicants:
Hyeon-jin Shin, Suwon-si, KR;
Jae-young Choi, Suwon-si, KR;
Yun-sung Woo, Yongin-si, KR;
Seon-mi Yoon, Yongin-si, KR;
Inventors:
Hyeon-jin Shin, Suwon-si, KR;
Jae-young Choi, Suwon-si, KR;
Yun-sung Woo, Yongin-si, KR;
Seon-mi Yoon, Yongin-si, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/26 (2006.01); C23C 16/02 (2006.01); C23C 16/56 (2006.01); B82Y 30/00 (2011.01); B82Y 40/00 (2011.01); H01L 21/02 (2006.01); C01B 32/186 (2017.01);
U.S. Cl.
CPC ...
B82Y 30/00 (2013.01); B82Y 40/00 (2013.01); C01B 32/186 (2017.08); C23C 16/0209 (2013.01); C23C 16/26 (2013.01); C23C 16/56 (2013.01); H01L 21/0242 (2013.01); H01L 21/0262 (2013.01); H01L 21/02381 (2013.01); H01L 21/02422 (2013.01); H01L 21/02488 (2013.01); H01L 21/02527 (2013.01); H01L 21/02672 (2013.01);
Abstract
A method of preparing crystalline graphene includes performing a first thermal treatment including supplying heat to an inorganic substrate in a reactor, introducing a vapor carbon supply source into the reactor during the first thermal treatment to form activated carbon, and binding of the activated carbon on the inorganic substrate to grow the crystalline graphene.