The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 08, 2022

Filed:

Apr. 16, 2019
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Kaoru Yamamoto, Seongnam-si, KR;

Chang-Hyun Kim, Seoul, KR;

Hyun-Jae Song, Hwaseong-si, KR;

Keun-Wook Shin, Yongin-si, KR;

Hyeon-Jin Shin, Suwon-si, KR;

Sung-Joo An, Yongin-si, KR;

Chang-Seok Lee, Seoul, KR;

Kee-Young Jun, Seongnam-si, KR;

Geun-O Jeong, Incheon, KR;

Jang-Hee Lee, Yongin-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); H01L 21/02 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02252 (2013.01); H01J 37/32192 (2013.01); H01L 21/67207 (2013.01);
Abstract

In a plasma deposition method, a substrate is loaded onto a substrate stage within a chamber. A first plasma is generated at a region separated from the substrate by a first distance. A first process gas is supplied to the first plasma region to perform a pre-treatment process on the substrate. A second plasma is generated at a region separated from the substrate by a second distance different from the first distance. A second process gas is supplied to the second plasma region to perform a deposition process on the substrate.


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