The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 2021
Filed:
Jan. 02, 2015
Applicant:
Samsung Electronics Co., Ltd., Suwon-Si, KR;
Inventors:
Seong-jun Jeong, Ulsan, KR;
Seong-jun Park, Seoul, KR;
Hyeon-jin Shin, Suwon-si, KR;
Yea-hyun Gu, Seoul, KR;
Hyoung-sub Kim, Seoul, KR;
Jae-hyun Yang, Suwon-si, KR;
Assignees:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
SUNGKYUNKWAN UNIVERSITY RESEARCH & BUSINESS FOUNDATION, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B32B 9/00 (2006.01); H01B 1/04 (2006.01); C23C 16/02 (2006.01); C23C 16/455 (2006.01); H01L 29/51 (2006.01); H01L 29/778 (2006.01); C23C 16/40 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01B 1/04 (2013.01); C23C 16/0281 (2013.01); C23C 16/40 (2013.01); C23C 16/405 (2013.01); C23C 16/45553 (2013.01); H01L 29/513 (2013.01); H01L 29/7781 (2013.01); H01L 29/1606 (2013.01); Y10T 428/265 (2015.01); Y10T 428/30 (2015.01);
Abstract
Example embodiments relate to a stacking structure having a material layer formed on a graphene layer, and a method of forming the material layer on the graphene layer. In the stacking structure, when the material layer is formed on the graphene layer by using an ALD method, an intermediate layer as a seed layer may be formed on the graphene layer by using a linear type precursor.