Samsung Electronics Co., Ltd.

Sungkyunkwan University

Yonsei University

Hyeon-jin Shin

Jae-young Choi

Seon-mi Yoon

Won-mook Choi

Seong-jun Park

Yun-sung Woo

Jae-ho Lee

Jin-seong Heo

Young-Hee Lee

Hyun-Jae Song

Joung-real Ahn

Kyung-Eun Byun

Sang-woo Kim

Gang-hee Han

Sung-Jin Kim

In-kyeong Yoo

Hyun-jong Chung

David Seo

Young-hee Lee

Dong-Wook Lee

Seong-jae Choi

Jin Yeong Lee

Seong-jun Jeong

Jung-tak Seo

Sang-Yoon Lee

Chang-Hyun Kim

Han-su Kim

Chang-seung Lee

Myung-Kwan Ryu

Kyung-bae Park

Jang-Hee Lee

Tae-sang Kim

Jang-yeon Kwon

Jae-man Choi

Moon-seok Kwon

Dong Wook Lee

Ji-sim Jung

Chang-Seok Lee

Hyoung-sub Kim

Ji-hoon Park

Kyung-Seok Son

Whan-Kyun Kim

Ki-deok Bae

Euk-che Hwang

Jun-seong Kim

Soo-min Kim

Kee-Young Jun

Kaoru Yamamoto

Geun-O Jeong

Sung-Joo An

Cheol-ho Jeon

Seong-chan Jun

Hyung-seo Yoon

Ju-yeong Oh

Ju-hwan Lim

Yea-hyun Gu

Jae-hyun Yang

Min-Hyun Lee

Keun-Wook Shin

A method of preparing crystalline graphene includes performing a first thermal treatment including supplying heat to an inorganic substrate in a reactor, introducing a vapor carbon supply source into the reactor during the first thermal treatment to form activated carbon, and binding of the activated carbon on the inorganic substrate to grow the crystalline graphene.

Direct graphene growing method

In a plasma deposition method, a substrate is loaded onto a substrate stage within a chamber. A first plasma is generated at a region separated from the substrate by a first distance. A first process gas is supplied to the first plasma region to perform a pre-treatment process on the substrate. A second plasma is generated at a region separated from the substrate by a second distance different from the first distance. A second process gas is supplied to the second plasma region to perform a deposition process on the substrate.

Plasma deposition method, plasma deposition apparatus and method of manufacturing semiconductor device

Example embodiments relate to a stacking structure having a material layer formed on a graphene layer, and a method of forming the material layer on the graphene layer. In the stacking structure, when the material layer is formed on the graphene layer by using an ALD method, an intermediate layer as a seed layer may be formed on the graphene layer by using a linear type precursor.

Stacking structure having material layer on graphene layer and method of forming material layer on graphene layer

A transparent electrode on at least one surface of a transparent substrate may include graphene doped with a p-dopant. The transparent electrode may be efficiently applied to a variety of display devices or solar cells.

Transparent electrode comprising doped graphene, process of preparing the same, and display device and solar cell comprising the electrode

A method of forming a substrate assembly includes preparing a substrate in a chamber, combining a solid-state nitrogen source and a boron source on the substrate, forming a metal layer on a surface of the substrate including the combined solid-state nitrogen and boron sources, and forming a first hexagonal boron nitride sheet directly bonded to the surface of the substrate by performing a heat treatment on the substrate including the metal layer and the combined solid-state nitrogen and boron sources.

Method of forming a substrate assembly

A graphene laminate including a substrate, a binder layer on the substrate, and graphene on the binder layer, wherein the graphene is bound to the substrate by the binder layer.

Graphene laminate and method of preparing the same

Provided is a process for economically preparing a graphene shell having a desired configuration which is applicable in various fields wherein in the process the thickness of the graphene shell can be controlled, and a graphene shell prepared by the process.

Graphene shell and process of preparing the same

A composition including graphene; and at least one dopant selected from the group consisting of an organic dopant and an inorganic dopant.

Doped graphene, method of manufacturing the doped graphene, and a device including the doped graphene

A substrate assembly includes a first hexagonal boron nitride sheet directly bonded to a surface of a substrate, and a metal layer on the first hexagonal boron nitride sheet.

Substrate assembly, method of forming the same, and electronic device including the same

Provided are a graphene pattern and a process of preparing the same. Graphene is patterned in a predetermined shape on a substrate to form the graphene pattern. The graphene pattern can be formed by forming a graphitizing catalyst pattern on a substrate, contacting a carbonaceous material with the graphitizing catalyst and heat-treating the resultant.

Graphene pattern and process of preparing the same

A thin film structure includes a metal seed layer, and a method of forming an oxide thin film on a conductive substrate by using the metal seed layer is disclosed. The thin film structure includes a transparent conductive substrate, a metal seed layer that is deposited on the transparent conductive substrate, and a metal oxide layer that is deposited on the metal seed layer.

Thin film structure including metal seed layer and method of forming oxide thin film on transparent conductive substrate by using the metal seed layer

A high frequency circuit includes a first electronic device, a second electronic device, and a graphene interconnection unit, where at least one of a trench and a via is defined under the graphene interconnection unit.

High frequency circuit comprising graphene and method of operating the same

Provided are a graphene sheet and a process of preparing the same. Particularly, a process of economically preparing a large-area graphene sheet having a desired thickness and a graphene sheet prepared by the process are provided.

Graphene sheet and process of preparing the same

A graphene base, including: graphene; and a substrate, wherein the graphene is formed directly on at least one surface of the substrate, and at least about 90 percent of an area of the surface of the substrate does not have a graphene wrinkle.

Graphene base and method of preparing the same

Growing community of inventors

Suwon-si, South Korea

Hyeon-jin Shin