The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2015
Filed:
Apr. 22, 2015
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Jae-ho Lee, Seoul, KR;
Seong-jun Park, Seoul, KR;
Kyung-eun Byun, Uijeongbu-si, KR;
David Seo, Yongin-si, KR;
Hyun-jae Song, Hwaseong-si, KR;
Hyung-cheol Shin, Seoul, KR;
Jae-hong Lee, Seoul, KR;
Hyun-jong Chung, Hwaseong-si, KR;
Jin-seong Heo, Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Seoul National University R&DB Foundation, Seoul, KR;
Abstract
According to example embodiments, a field effect transistor includes a graphene channel layer on a substrate. The graphene channel layer defines a slit. A source electrode and a drain electrode are spaced apart from each other and arranged to apply voltages to the graphene channel layer. A gate insulation layer is between the graphene channel layer and a gate electrode.