Company Filing History:

12 out of 131,906

Samsung Electronics Co., Ltd.

patents

6 out of 1,575

Seoul National University

where one patent can have more than one assignee

Years Active: 2003-2015

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12 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 9166062 - Field effect transistor using graphene (2015-10-20),

2. 9048310 - Graphene switching device having tunable barrier (2015-06-02),

3. 9040957 - Field effect transistor using graphene (2015-05-26),

4. 8785912 - Graphene electronic device including a plurality of graphene channel layers (2014-07-22),

5. 8405133 - Semiconductor device including graphene and method of manufacturing the semiconductor device (2013-03-26),

6. 7828981 - Semiconductor probe with high resolution resistive tip and method of fabricating the same (2010-11-09),

7. 7671616 - Semiconductor probe having embossed resistive tip and method of fabricating the same (2010-03-02),

8. 7602202 - Semiconductor probe with high resolution resistive tip having doping control layer and method of fabricating the same (2009-10-13),

9. 7411210 - Semiconductor probe with resistive tip having metal shield thereon (2008-08-12),

10. 7287421 - Semiconductor probe with high resolution resistive tip and method of fabricating the same (2007-10-30),

11. 6680224 - Methods of forming and operating field effect transistors having gate and sub-gate electrodes (2004-01-20),

12. 6563151 - Field effect transistors having gate and sub-gate electrodes that utilize different work function materials and methods of forming same (2003-05-13),

Title: Hyung-cheol Shin: Innovator in Graphene Technology

Introduction

Hyung-cheol Shin is a prominent inventor based in Seoul, South Korea. He has made significant contributions to the field of graphene technology, holding a total of 12 patents. His work focuses on developing advanced electronic devices that utilize the unique properties of graphene.

Latest Patents

One of his latest patents is a field effect transistor using graphene. This invention includes a graphene channel layer on a substrate, which defines a slit. The design features a source electrode and a drain electrode that are spaced apart to apply voltages to the graphene channel layer. Additionally, a gate insulation layer is positioned between the graphene channel layer and a gate electrode.

Another notable patent is a graphene switching device having a tunable barrier. This device comprises a semiconductor substrate with a first well doped with an impurity. It includes a first electrode on a specific area of the substrate, an insulation layer on another area, and a graphene layer that extends onto the semiconductor substrate. The design allows for a tunable energy barrier between the graphene layer and the first electrode, enhancing the device's functionality.

Career Highlights

Hyung-cheol Shin has worked with leading organizations, including Samsung Electronics Co., Ltd. and Seoul National University. His experience in these institutions has allowed him to advance his research and development in graphene technology significantly.

Collaborations

He has collaborated with notable colleagues, including Jae-hong Lee and Jae-ho Lee, contributing to various innovative projects in the field.

Conclusion

Hyung-cheol Shin's work in graphene technology exemplifies the potential of this material in revolutionizing electronic devices. His numerous patents and collaborations highlight his commitment to innovation and advancement in the field.

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