The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 2013
Filed:
Nov. 01, 2011
Hyun-jong Chung, Hwaseong-si, KR;
Jae-ho Lee, Seoul, KR;
Jae-hong Lee, Anyang-Si, KR;
Hyung-cheol Shin, Seoul, KR;
Sun-ae Seo, Hwaseong-si, KR;
Sung-hoon Lee, Hwaseong-si, KR;
Jin-seong Heo, Suwon-si, KR;
Hee-jun Yang, Seoul, KR;
Hyun-jong Chung, Hwaseong-si, KR;
Jae-ho Lee, Seoul, KR;
Jae-hong Lee, Anyang-Si, KR;
Hyung-cheol Shin, Seoul, KR;
Sun-ae Seo, Hwaseong-si, KR;
Sung-hoon Lee, Hwaseong-si, KR;
Jin-seong Heo, Suwon-si, KR;
Hee-jun Yang, Seoul, KR;
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
Abstract
In a semiconductor device including graphene, a gate insulating layer may be formed between a gate electrode and a graphene layer, and an interlayer insulating layer may be formed under a portion of the graphene layer under which the gate insulating layer is not formed. The gate insulating layer may include a material that has higher dielectric permittivity than the interlayer insulating layer.