The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 22, 2014

Filed:

Sep. 06, 2011
Applicants:

Hyun-jong Chung, Hwaseong-si, KR;

Jae-hong Lee, Anyang-si, KR;

Jae-ho Lee, Seoul, KR;

Hyung-cheol Shin, Seoul, KR;

Sun-ae Seo, Hwaseong-si, KR;

Sung-hoon Lee, Hwaseong-si, KR;

Jin-seong Heo, Suwon-si, KR;

Hee-jun Yang, Seoul, KR;

Inventors:

Hyun-jong Chung, Hwaseong-si, KR;

Jae-hong Lee, Anyang-si, KR;

Jae-ho Lee, Seoul, KR;

Hyung-cheol Shin, Seoul, KR;

Sun-ae Seo, Hwaseong-si, KR;

Sung-hoon Lee, Hwaseong-si, KR;

Jin-seong Heo, Suwon-si, KR;

Hee-jun Yang, Seoul, KR;

Assignees:

Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;

SNU R&DB Foundation, Seoul, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/775 (2006.01); B82Y 99/00 (2011.01);
U.S. Cl.
CPC ...
Abstract

Graphene electronic devices may include a gate electrode on a substrate, a first gate insulating film covering the gate electrode, a plurality of graphene channel layers on the substrate, a second gate insulating film between the plurality of graphene channel layers, and a source electrode and a drain electrode connected to both edges of each of the plurality of graphene channel layers.


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