The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 05, 2016

Filed:

Dec. 11, 2013
Applicant:

Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;

Inventors:

Kyung-eun Byun, Uijeongbu-si, KR;

Seong-jun Park, Seoul, KR;

David Seo, Yongin-si, KR;

Hyun-jae Song, Hwaseong-si, KR;

Jae-ho Lee, Seoul, KR;

Hyun-jong Chung, Hwaseong-si, KR;

Jin-seong Heo, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/16 (2006.01); H01L 29/45 (2006.01); H01L 29/739 (2006.01); H01L 29/786 (2006.01); H01L 29/78 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1606 (2013.01); H01L 29/45 (2013.01); H01L 29/452 (2013.01); H01L 29/456 (2013.01); H01L 29/458 (2013.01); H01L 29/7391 (2013.01); H01L 29/78 (2013.01); H01L 29/78618 (2013.01); H01L 29/1087 (2013.01);
Abstract

According to example embodiments, an electronic device includes: a semiconductor layer; a graphene directly contacting a desired (and/or alternatively predetermined) area of the semiconductor layer; and a metal layer on the graphene. The desired (and/or alternatively predetermined) area of the semiconductor layer include one of: a constant doping density, a doping density that is equal to or less than 10cm, and a depletion width of less than or equal to 3 nm.


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