The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 05, 2016

Filed:

Apr. 03, 2014
Applicant:

Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;

Inventors:

Hyun-jong Chung, Hwaseong-si, KR;

David Seo, Yongin-si, KR;

Seong-jun Park, Seoul, KR;

Kyung-eun Byun, Uijeongbu-si, KR;

Hyun-jae Song, Hwaseong-si, KR;

Hee-jun Yang, Seoul, KR;

Jin-seong Heo, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/02 (2006.01); H01L 29/47 (2006.01); H01L 21/74 (2006.01); H01L 29/778 (2006.01); H01L 29/78 (2006.01); H01L 29/16 (2006.01); H01L 29/165 (2006.01); H01L 29/41 (2006.01); B82Y 10/00 (2011.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 29/47 (2013.01); B82Y 10/00 (2013.01); H01L 21/74 (2013.01); H01L 29/0895 (2013.01); H01L 29/165 (2013.01); H01L 29/1606 (2013.01); H01L 29/413 (2013.01); H01L 29/66477 (2013.01); H01L 29/7781 (2013.01); H01L 29/7839 (2013.01); H01L 29/0847 (2013.01); H01L 29/41725 (2013.01); H01L 29/41766 (2013.01); H01L 29/66977 (2013.01);
Abstract

A graphene device includes: a semiconductor substrate having a first region and a second region; a graphene layer on the first region, but not on the second region of the semiconductor substrate; a first electrode on a first portion of the graphene layer; a second electrode on a second portion of the graphene layer; an insulating layer between the graphene layer and the second electrode; and a third electrode on the second region of the semiconductor substrate. The semiconductor substrate has a tunable Schottky barrier formed by junction of the graphene layer and the semiconductor substrate.


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