Company Filing History:

17 out of 5,671

Globalfoundries Inc.

patents

2 out of 164,108

International Business Machines Corporation

patents

2 out of 12,867

Advanced Micro Devices Corporation

patents

4. 1 out of 2,867

Stmicroelectronics Gmbh

patents

where one patent can have more than one assignee

Years Active: 2010-2018

where 'Filed Patents' based on already Granted Patents

19 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 9876089 - High-k and p-type work function metal first fabrication process having improved annealing process flows (2018-01-23),

2. 9570318 - High-k and p-type work function metal first fabrication process having improved annealing process flows (2017-02-14),

3. 9355921 - Test macro for use with a multi-patterning lithography process (2016-05-31),

4. 9251070 - Methods and apparatus for multi-level cache hierarchies (2016-02-02),

5. 9209037 - Methods for fabricating integrated circuits including selectively forming and removing fin structures (2015-12-08),

6. 9166023 - Bulk finFET semiconductor-on-nothing integration (2015-10-20),

7. 9159633 - Test macro for use with a multi-patterning lithography process (2015-10-13),

8. 9117877 - Methods of forming a dielectric cap layer on a metal gate structure (2015-08-25),

9. 9041087 - Semiconductor devices having dielectric caps on contacts and related fabrication methods (2015-05-26),

10. 8853037 - Methods for fabricating integrated circuits (2014-10-07),

11. 8809184 - Methods of forming contacts for semiconductor devices using a local interconnect processing scheme (2014-08-19),

12. 8765599 - Semiconductor devices having dielectric caps on contacts and related fabrication methods (2014-07-01),

13. 8716094 - FinFET formation using double patterning memorization (2014-05-06),

14. 8464130 - Memory device and method thereof (2013-06-11),

15. 8461008 - Methods for fabricating FinFET integrated circuits in bulk semiconductor substrates (2013-06-11),

Title: Innovations of Jin Haeng Cho: A Pioneering Inventor in FinFET Technology

Introduction: Jin Haeng Cho is a prominent inventor based in Acton, MA, known for his significant contributions to semiconductor technology. With a remarkable portfolio of 19 patents, he has been instrumental in advancing the fabrication processes of FinFET devices. His innovative work continues to shape the future of electronics and integrated circuits.

Latest Patents: Among his latest inventions is a patent for a high-k and p-type work function metal first fabrication process that features improved annealing process flows. This method involves the formation of portions of a fin-type field effect transistor (FinFET). The process includes creating at least one fin and applying a dielectric layer over it. A work function layer is then formed atop the dielectric layer. Additionally, a source or drain region is established adjacent to the fin, followed by an anneal operation that treats both the dielectric layer and the source or drain region. The work function layer serves a critical protective role during this annealing process.

Career Highlights: Jin Haeng Cho has made significant strides in his career, having worked with leading technology companies such as GlobalFoundries Inc. and IBM. His expertise in semiconductor fabrication and process engineering has established him as a key figure in the industry.

Collaborations: Throughout his career, Jin has collaborated with esteemed colleagues, including Hui Zang and Lei Yuan. These collaborations have fostered a dynamic exchange of ideas and innovation, contributing to many successful projects in semiconductor technology.

Conclusion: Jin Haeng Cho's innovative approach and dedication to advancing FinFET technology has earned him 19 patents and recognition in the field of semiconductor engineering. His work not only influences his companies but also sets a foundation for future advancements in technology. As he continues to innovate, the impact of his inventions will be felt across the electronics industry for years to come.

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