The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2015
Filed:
Jan. 16, 2012
Xiuyu Cai, Albany, NY (US);
Ruilong Xie, Albany, NY (US);
Jin Cho, Palo Alto, CA (US);
John Iacoponi, Wappingers Falls, NY (US);
Xiuyu Cai, Albany, NY (US);
Ruilong Xie, Albany, NY (US);
Jin Cho, Palo Alto, CA (US);
John Iacoponi, Wappingers Falls, NY (US);
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
Disclosed herein are various methods of forming isolation structures on FinFETs and other semiconductor devices, and the resulting devices that have such isolation structures. In one example, the method includes forming a plurality of spaced-apart trenches in a semiconducting substrate, wherein the trenches define a fin for a FinFET device, forming a layer of insulating material in the trenches, wherein the layer of insulating material covers a lower portion of the fin but not an upper portion of the fin, forming a protective material on the upper portion of the fin, and performing a heating process in an oxidizing ambient to form a thermal oxide region on the covered lower portion of the fin.