The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2015
Filed:
May. 27, 2014
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Assignee:
GLOBALFOUNDRIES, INC., Grand Cayman, KY;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 23/48 (2006.01); H01L 21/4763 (2006.01); H01L 29/423 (2006.01); H01L 23/485 (2006.01); H01L 21/8234 (2006.01); H01L 21/768 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4232 (2013.01); H01L 23/485 (2013.01); H01L 21/823425 (2013.01); H01L 21/823475 (2013.01); H01L 21/76888 (2013.01); H01L 21/76895 (2013.01); H01L 21/76897 (2013.01); H01L 21/76834 (2013.01); H01L 29/66477 (2013.01); H01L 29/78 (2013.01); H01L 2924/0002 (2013.01);
Abstract
Semiconductor device structures are provided. An exemplary semiconductor device structure includes a substrate of a semiconductor material and a gate structure overlying the substrate. The semiconductor substrate further includes a doped region formed in the substrate proximate the gate structure and a first dielectric material overlying the doped region. The semiconductor substrate also includes a conductive contact formed in the first dielectric material, the conductive contact being electrically connected to the doped region, and a dielectric cap overlying the conductive contact.