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For the Inventor, By the Inventor

Fangliao, Taiwan

Jian-Shiou Huang

This inventor holds 16 USPTO granted patents and 3 published patent applications, primarily in Semiconductor Devices. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2016-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jian-Shiou Huang. Retrieved from https://idiyas.com/inventor/jian-shiou-huang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 16 

% Patents Active = 87.5

Average Co-Inventor Count = 3.9

ph-index = 4

Forward Citations = 45(Granted Patents)


Location History:

  • Fangliao Township, Pingtung County, TW (2019 - 2020)
  • Fangliao Township, TW (2016 - 2021)
  • Pingtung County, TW (2016 - 2021)

Company Filing History:

goldMedal16 out of 42,965 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2016-2025

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Areas of Expertise:
Capacitor Structure
FinFET Device
MIM/RRAM Structure
Semiconductor Manufacturing
Gap Fill Layers
Multi-Layer Film
Oxidation-Resist Liner
Electric Field Uniformity
Memory Structure
Buffer Cap Layer
Protective Sidewall Techniques
Leakage Current Reduction
16 patents (USPTO):Explore Patents
1. 12336201 - Capacitor structure and method of making the same (2025-06-17),
2. 11038010 - Capacitor structure and method of making the same (2021-06-15),
3. 10978305 - Manufacturing method for a film stack of a semiconductor device (2021-04-13),
4. 10937686 - Formation and in-situ treatment processes for gap fill layers (2021-03-02),
5. 10629497 - FinFET device structure and method for enlarging gap-fill window (2020-04-21),
6. 10468409 - FinFET device with oxidation-resist STI liner structure (2019-11-05),
7. 10361113 - Formation and in-situ treatment processes for gap fill layers (2019-07-23),
8. 10176999 - Semiconductor device having a multi-layer, metal-containing film (2019-01-08),
9. 9887134 - Semiconductor devices, methods of manufacture thereof, and methods of singulating semiconductor devices (2018-02-06),
10. 9825117 - MIM/RRAM structure with improved capacitance and reduced leakage current (2017-11-21),
11. 9761799 - Bottom electrode structure for improved electric field uniformity (2017-09-12),
12. 9543375 - MIM/RRAM structure with improved capacitance and reduced leakage current (2017-01-10),
13. 9502649 - Bottom electrode structure for improved electric field uniformity (2016-11-22),
14. 9450183 - Memory structure having top electrode with protrusion (2016-09-20),
15. 9425061 - Buffer cap layer to improve MIM structure performance (2016-08-23),

Title: The Innovative Mind of Jian-Shiou Huang

Introduction: Jian-Shiou Huang is an accomplished inventor based in Fangliao, Taiwan, recognized for his significant contributions in the field of semiconductor technology. With a remarkable portfolio of 15 patents, Huang has made noteworthy advancements that enhance the efficiency and functionality of semiconductor devices.

Latest Patents: Among his most recent innovations, Huang has developed a capacitor structure and method of making the same. This invention features a structure that includes a semiconductor substrate along with a conductor-insulator-conductor (C-I-C) capacitor. The C-I-C capacitor is strategically placed on the semiconductor substrate and comprises a first conductor, a nitrogenous dielectric layer, and a second conductor, ensuring improved performance in electronic applications.

Another of Huang's latest patents details a manufacturing method for a film stack of a semiconductor device. This innovation presents a film stack that consists of alternating layers of first and second metal-containing films. The films share the same metal and non-metal elements, with a higher concentration of the metal element present in the second metal-containing film, thereby optimizing material properties in semiconductor fabrication.

Career Highlights: Currently, Jian-Shiou Huang is an integral member of the Taiwan Semiconductor Manufacturing Company Ltd. His expertise and inventive spirit have positioned him as a leader in his field, contributing to advancements that address contemporary challenges in semiconductor technology.

Collaborations: Huang has collaborated with notable colleagues such as Yao-Wen Chang and Cheng-Yuan Tsai, further underscoring his commitment to teamwork and shared innovation in developing cutting-edge semiconductor solutions.

Conclusion: Jian-Shiou Huang exemplifies excellence in the realm of innovation within the semiconductor industry. His extensive patent portfolio and collaborative efforts play a significant role in the continued advancement of technology, making him a noteworthy figure among inventors today.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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