The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2016
Filed:
Mar. 12, 2015
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
An integrated circuit with a multilayer bottom electrode, and a corresponding method for manufacturing the integrated circuit, are provided. An insulating layer includes an opening, and a bottom electrode substantially fills the opening. The bottom electrode includes a plurality of layers laterally or vertically stacked upon each other, and lining the opening. The layers of the plurality include corresponding surfaces facing an interior of the opening and extending respectively at angles relative to a top surface of the bottom electrode. Further, the layers of the plurality include corresponding regions of increased resistance or height extending along the corresponding surfaces. A dielectric layer is arranged over the insulating layer and the bottom electrode, and a top electrode arranged over the dielectric layer.