The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2025
Filed:
Jun. 14, 2021
Applicant:
Taiwan Semiconductor Manufacturing Company Limited, Hsin-Chu, TW;
Inventors:
Jian-Shiou Huang, Fangliao Township, TW;
Chia-Shiung Tsai, Hsin-Chu, TW;
Cheng-Yuan Tsai, Chu Pei, TW;
Hsing-Lien Lin, Hsin-Chu, TW;
Yao-Wen Chang, Taipei, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED, Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 1/68 (2025.01); H01L 21/02 (2006.01); H10B 63/00 (2023.01);
U.S. Cl.
CPC ...
H10D 1/696 (2025.01); H01L 21/02247 (2013.01); H01L 21/02249 (2013.01); H01L 2924/1205 (2013.01); H10D 1/68 (2025.01);
Abstract
A structure includes a semiconductor substrate, a conductor-insulator-conductor capacitor. The conductor-insulator-conductor capacitor is disposed on the semiconductor substrate and includes a first conductor, a nitrogenous dielectric layer and a second conductor. The nitrogenous dielectric layer is disposed on the first conductor and the second conductor is disposed on the nitrogenous dielectric layer.