Growing community of inventors

Fangliao, Taiwan

Jian-Shiou Huang

Average Co-Inventor Count = 3.87

ph-index = 4

The patent ph-index is calculated by counting the number of publications for which an author has been cited by other authors at least that same number of times.

Forward Citations = 45

Jian-Shiou HuangCheng-Yuan Tsai (12 patents)Jian-Shiou HuangYao-Wen Chang (12 patents)Jian-Shiou HuangChia-Shiung Tsai (7 patents)Jian-Shiou HuangHsing-Lien Lin (7 patents)Jian-Shiou HuangChih-Tang Peng (3 patents)Jian-Shiou HuangTai-Chun Huang (2 patents)Jian-Shiou HuangYen-Chun Huang (2 patents)Jian-Shiou HuangBang-Tai Tang (2 patents)Jian-Shiou HuangKong-Beng Thei (1 patent)Jian-Shiou HuangSung-En Lin (1 patent)Jian-Shiou HuangHan-Pin Chung (1 patent)Jian-Shiou HuangSzu-Ping Lee (1 patent)Jian-Shiou HuangJian-Shiou Huang (16 patents)Cheng-Yuan TsaiCheng-Yuan Tsai (220 patents)Yao-Wen ChangYao-Wen Chang (98 patents)Chia-Shiung TsaiChia-Shiung Tsai (485 patents)Hsing-Lien LinHsing-Lien Lin (109 patents)Chih-Tang PengChih-Tang Peng (66 patents)Tai-Chun HuangTai-Chun Huang (129 patents)Yen-Chun HuangYen-Chun Huang (25 patents)Bang-Tai TangBang-Tai Tang (14 patents)Kong-Beng TheiKong-Beng Thei (214 patents)Sung-En LinSung-En Lin (24 patents)Han-Pin ChungHan-Pin Chung (15 patents)Szu-Ping LeeSzu-Ping Lee (7 patents)
..
Inventor’s number of patents
..
Strength of working relationships

Company Filing History:

1. Taiwan Semiconductor Manufacturing Comp. Ltd. (16 from 40,635 patents)


16 patents:

1. 12336201 - Capacitor structure and method of making the same

2. 11038010 - Capacitor structure and method of making the same

3. 10978305 - Manufacturing method for a film stack of a semiconductor device

4. 10937686 - Formation and in-situ treatment processes for gap fill layers

5. 10629497 - FinFET device structure and method for enlarging gap-fill window

6. 10468409 - FinFET device with oxidation-resist STI liner structure

7. 10361113 - Formation and in-situ treatment processes for gap fill layers

8. 10176999 - Semiconductor device having a multi-layer, metal-containing film

9. 9887134 - Semiconductor devices, methods of manufacture thereof, and methods of singulating semiconductor devices

10. 9825117 - MIM/RRAM structure with improved capacitance and reduced leakage current

11. 9761799 - Bottom electrode structure for improved electric field uniformity

12. 9543375 - MIM/RRAM structure with improved capacitance and reduced leakage current

13. 9502649 - Bottom electrode structure for improved electric field uniformity

14. 9450183 - Memory structure having top electrode with protrusion

15. 9425061 - Buffer cap layer to improve MIM structure performance

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as of
12/4/2025
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