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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9887134 B1

PDFFull Text
Date of Patent:
Feb. 06, 2018

Filed:

Jun. 01, 2016

Semiconductor devices, methods of manufacture thereof, and methods of singulating semiconductor devices

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Yao-Wen Chang, Taipei, TW;

Jian-Shiou Huang, Fangliao Township, TW;

Cheng-Yuan Tsai, Chu-Pei, TW;

Kong-Beng Thei, Pao-Shan Village, TW;

Assignee:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Attorney:

Slater Matsil, LLP

Primary Examiner:

Luan C Thai

Int. Cl.
CPC ...
H01L 21/78 (2006.01); H01L 21/683 (2006.01); H01L 21/02 (2006.01); H01L 21/3105 (2006.01); H01L 21/768 (2006.01); H01L 23/29 (2006.01); H01L 23/31 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/78 (2013.01); H01L 21/0228 (2013.01); H01L 21/02178 (2013.01); H01L 21/31053 (2013.01); H01L 21/6835 (2013.01); H01L 21/76895 (2013.01); H01L 23/291 (2013.01); H01L 23/3171 (2013.01); H01L 24/03 (2013.01); H01L 24/06 (2013.01); H01L 2221/68327 (2013.01); H01L 2924/05432 (2013.01); H01L 2924/14 (2013.01);
Abstract

Semiconductor devices, methods of manufacture thereof, and methods of singulating semiconductor devices are disclosed. In some embodiments, a method of manufacturing a semiconductor device includes forming a trench in a substrate, the trench being formed within a first side of the substrate and disposed around a portion of the substrate. A first insulating material is formed over the first side of the substrate and the trench, and a second insulating material is formed over the first insulating material. Apertures are formed in the second insulating material and the first insulating material over the portion of the substrate. Features are formed in the apertures, and a carrier is coupled to the features and the second insulating material. A second side of the substrate is planarized, the second side of the substrate being opposite the first side of the substrate. The second insulating material is removed, and the carrier is removed.

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Chang, Yao-Wen. (2018). Semiconductor devices, methods of manufacture thereof, and methods of singulating semiconductor devices (U.S. Patent No. 9887134). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9887134

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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