The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 08, 2019

Filed:

May. 05, 2016
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Yao-Wen Chang, Taipei, TW;

Jian-Shiou Huang, Pingtung County, TW;

Cheng-Yuan Tsai, Hsin-Chu County, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/285 (2006.01); H01L 29/45 (2006.01); H01L 29/06 (2006.01); H01L 23/532 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/2855 (2013.01); H01L 21/76852 (2013.01); H01L 23/53223 (2013.01); H01L 23/53238 (2013.01); H01L 29/0642 (2013.01); H01L 29/0692 (2013.01); H01L 29/456 (2013.01);
Abstract

A film stack and manufacturing method thereof are provided. The film stack includes a plurality of first metal-containing films, and a plurality of second metal-containing films. The first metal-containing films and the second metal-containing films are alternately stacked to each other. The first metal-containing films and the second metal-containing films comprise the same metal element and the same nonmetal element, and a concentration of the metal element in the second metal-containing film is greater than a concentration of the nonmetal element in the second metal-containing film.


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