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For the Inventor, By the Inventor

Yongin, South Korea

Jeong-yun Lee

This inventor holds 24 USPTO granted patents and 2 published patent applications, primarily in Semiconductor Devices. Top assignees: Samsung Electronics Co., Ltd., Industry-University Cooperation Foundation Hanyang University. Active years: 2006-2021.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jeong-yun Lee. Retrieved from https://idiyas.com/inventor/jeong-yun-lee

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 24 

% Patents Active = 87.5

Average Co-Inventor Count = 4.2

ph-index = 5

Forward Citations = 132(Granted Patents)


Location History:

  • Hwaseong-si, KR (2020)
  • Yongin-si, KR (2006 - 2021)

Company Filing History:

goldMedal24 out of 132,108 
 
Samsung Electronics Co., Ltd.
 patents
silverMedal1 out of 1,237 
 
Industry-University Cooperation Foundation Hanyang University
 patents
where one patent can have more than one assignee

Years Active: 2006-2021

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Areas of Expertise:
Integrated Circuit
FinFET
Semiconductor Device
Source/Drain Regions
Photo-mask
Plasma Diagnostics
Etching Method
Dummy Structures
Fabrication Techniques
Synchronous Pulse Plasma
Phase Shift Mask
Transmissivity Correction
24 patents (USPTO):Explore Patents
1. 11011516 - Integrated circuit device and method of manufacturing the same (2021-05-18),
2. 10714618 - Finfet with various shaped source/drain regions (2020-07-14),
3. 10559565 - Integrated circuit device and method of manufacturing the same (2020-02-11),
4. 10522616 - Semiconductor device (2019-12-31),
5. 10256237 - Integrated circuit device and method of manufacturing the same (2019-04-09),
6. 9972717 - Semiconductor device and method of fabricating the same (2018-05-15),
7. 9935017 - Methods of manufacturing semiconductor devices by forming source/drain regions before gate electrode separation (2018-04-03),
8. 9754770 - Method and apparatus of diagnosing plasma in plasma space (2017-09-05),
9. 9659827 - Methods of manufacturing semiconductor devices by forming source/drain regions before gate electrode separation (2017-05-23),
10. 9653363 - Methods of fabricating FinFET semiconductor devices including dummy structures (2017-05-16),
11. 9443852 - Integrated circuit devices with source/drain regions including multiple segments (2016-09-13),
12. 9431478 - Semiconductor device and method of fabricating the same (2016-08-30),
13. 9379107 - FinFET semiconductor devices including dummy structures (2016-06-28),
14. 9318575 - Semiconductor device and method for fabricating the same (2016-04-19),
15. 9287346 - Semiconductor device (2016-03-15),

Title: Jeong-yun Lee: Pioneering Inventor from Yongin-si

Introduction:

Jeong-yun Lee, a visionary inventor hailing from Yongin-si, South Korea, has made remarkable contributions to the world of inventions. With a profound inventive spirit and unwavering dedication to creating impactful solutions, he stands out as a true innovator.

Latest Patents:

Lee's innovative work spans across various fields, with a total of 24 patents to his name. His latest patents include groundbreaking inventions such as the "Integrated Circuit Device and Method of Manufacturing the Same" and the "FinFET with Various Shaped Source/Drain Regions."

Career Highlights:

Throughout his career, Jeong-yun Lee has worked with prestigious companies like Samsung Electronics Co., Ltd. and the Industry-University Cooperation Foundation at Hanyang University. His expertise and innovative mindset have led to the development of cutting-edge technologies that have left a lasting impact on the industry.

Collaborations:

In his journey as an inventor, Lee has collaborated with accomplished professionals such as Yeong-Jong Jeong and Dong-Suk Shin. These collaborations have not only enriched his work but have also fostered a culture of innovation and knowledge-sharing.

Conclusion:

Jeong-yun Lee's inventive prowess and relentless pursuit of solutions have positioned him as a trailblazer in the world of inventions. His visionary approach and collaborative spirit continue to inspire the next generation of inventors, leaving an indelible mark on the landscape of innovation.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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