The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2020
Filed:
Sep. 13, 2018
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Geum-jung Seong, Seoul, KR;
Bo-ra Lim, Seoul, KR;
Jeong-yun Lee, Hwaseong-si, KR;
Ah-reum Ji, Hwaseong-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 27/088 (2006.01); H01L 21/768 (2006.01); H01L 21/8238 (2006.01); H01L 29/66 (2006.01); H01L 27/092 (2006.01);
U.S. Cl.
CPC ...
H01L 29/785 (2013.01); H01L 21/76829 (2013.01); H01L 21/823821 (2013.01); H01L 27/0886 (2013.01); H01L 27/0924 (2013.01); H01L 29/0649 (2013.01); H01L 29/0657 (2013.01); H01L 29/0847 (2013.01); H01L 29/66553 (2013.01); H01L 29/7854 (2013.01);
Abstract
A semiconductor device includes a substrate having a fin active region pattern having a protruding shape, a device isolation layer pattern covering a side surface of a lower portion of the fin active region pattern, a spacer pattern covering a side surface of a portion of the fin active region pattern that protrudes from a top surface of the device isolation layer pattern, and a source/drain region in contact with a top surface of the fin active region pattern and a top surface of the spacer pattern.