The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 2018
Filed:
Apr. 18, 2017
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/8238 (2006.01); H01L 29/66 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 29/161 (2006.01); H01L 29/16 (2006.01); H01L 29/165 (2006.01); H01L 29/08 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823828 (2013.01); H01L 21/02529 (2013.01); H01L 21/02532 (2013.01); H01L 21/823814 (2013.01); H01L 21/823821 (2013.01); H01L 21/823878 (2013.01); H01L 27/0924 (2013.01); H01L 29/0653 (2013.01); H01L 29/0847 (2013.01); H01L 29/161 (2013.01); H01L 29/165 (2013.01); H01L 29/1608 (2013.01); H01L 29/66545 (2013.01); H01L 29/7848 (2013.01);
Abstract
Spaced apart first and second fins are formed on a substrate. An isolation layer is formed on the substrate between the first and second fins. A gate electrode is formed on the isolation layer and crossing the first and second fins. Source/drain regions are formed on the first and second fins adjacent the gate electrode. After forming the source/drain regions, a portion of the gate electrode between the first and second fins is removed to expose the isolation layer. The source/drain regions may be formed by epitaxial growth.