The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2016
Filed:
Feb. 18, 2015
Applicants:
Yeong-jong Jeong, Yongin-si, KR;
Jeong-yun Lee, Yongin-si, KR;
Dong-hyun Kim, Siheung-si, KR;
Bok-young Lee, Seoul, KR;
Inventors:
Yeong-Jong Jeong, Yongin-si, KR;
Jeong-Yun Lee, Yongin-si, KR;
Dong-Hyun Kim, Siheung-si, KR;
Bok-Young Lee, Seoul, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/94 (2006.01); H01L 31/062 (2012.01); H01L 31/113 (2006.01); H01L 31/119 (2006.01); H01L 27/088 (2006.01); H01L 29/08 (2006.01); H01L 29/423 (2006.01); H01L 21/8238 (2006.01); H01L 29/78 (2006.01); H01L 27/092 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0886 (2013.01); H01L 21/823814 (2013.01); H01L 21/823821 (2013.01); H01L 27/0924 (2013.01); H01L 29/0847 (2013.01); H01L 29/42356 (2013.01); H01L 29/785 (2013.01);
Abstract
Integrated circuit devices with source/drain regions including multiple segments and methods of forming the same are provided. The integrated circuit devices may include a gate structure on a substrate and a source/drain region in the substrate adjacent the gate structure. The source/drain region may include a sidewall including a plurality of curved sidewall sections.