The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 28, 2016

Filed:

Apr. 22, 2015
Applicants:

Bok-young Lee, Seoul, KR;

Jeong-yun Lee, Yongin-si, KR;

Dong-hyun Kim, Siheung-si, KR;

Myeong-cheol Kim, Suwon-si, KR;

Dong-woo Han, Seoul, KR;

Inventors:

Bok-Young Lee, Seoul, KR;

Jeong-Yun Lee, Yongin-si, KR;

Dong-Hyun Kim, Siheung-si, KR;

Myeong-Cheol Kim, Suwon-si, KR;

Dong-Woo Han, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 27/088 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0886 (2013.01); H01L 27/0207 (2013.01);
Abstract

Provided are a semiconductor device and a method of fabricating a semiconductor device. The semiconductor device includes a first active fin and a second active fin which protrude from a substrate and extend along a first direction, a first gate structure which is on the first active fin to extend along a second direction intersecting the first direction, a second gate structure which is located adjacent to the first gate structure in the second direction and is on the second active fin to extend along the second direction, and a dummy structure which is in a space between the first gate structure and the second gate structure.


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