This inventor holds 2 USPTO granted patents. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2016-2017.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2016-2017
Title: Innovations of Dong-Woo Han in Semiconductor Technology
Introduction
Dong-Woo Han is a prominent inventor based in Seoul, South Korea. He has made significant contributions to the field of semiconductor technology, particularly in the development of FinFET devices. With a total of 2 patents, his work has been instrumental in advancing semiconductor fabrication methods.
Latest Patents
Dong-Woo Han's latest patents include innovative methods for fabricating FinFET semiconductor devices that incorporate dummy structures. The first patent describes a semiconductor device featuring a first active fin and a second active fin that protrude from a substrate and extend along a specific direction. It also includes a first gate structure on the first active fin and a second gate structure on the second active fin, with a dummy structure positioned between them. The second patent reiterates similar advancements in FinFET semiconductor devices, emphasizing the importance of these structures in enhancing device performance.
Career Highlights
Dong-Woo Han is currently employed at Samsung Electronics Co., Ltd., a leading company in the technology sector. His role involves research and development in semiconductor technologies, where he applies his expertise to create cutting-edge solutions.
Collaborations
Throughout his career, Dong-Woo Han has collaborated with notable colleagues, including Bok-Young Lee and Jeong-yun Lee. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.
Conclusion
Dong-Woo Han's contributions to semiconductor technology through his patents and work at Samsung Electronics Co., Ltd. highlight his role as a key innovator in the field. His advancements in FinFET devices are paving the way for future developments in semiconductor fabrication.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
