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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9972717 B1

PDFFull Text
Date of Patent:
May. 15, 2018

Filed:

Aug. 04, 2016

Semiconductor device and method of fabricating the same

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Yeong-Jong Jeong, Yongin-si, KR;

Jeong-Yun Lee, Yongin-si, KR;

Geo-Myung Shin, Seoul, KR;

Dong-Suk Shin, Yongin-si, KR;

Si-Hyung Lee, Suwon-si, KR;

Seo-Jin Jeong, Incheon, KR;

Assignee:

Samsung Electronics Co., Ltd., Gyeonggi-do, KR;

Attorney:

Harness, Dickey & Pierce, P.L.C.

Primary Examiner:

Sonya D McCall Shepard

Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01); B82Y 10/00 (2011.01); H01L 29/775 (2006.01); H01L 29/41 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 29/08 (2006.01); H01L 29/16 (2006.01); H01L 29/161 (2006.01); H01L 29/165 (2006.01); H01L 29/423 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7848 (2013.01); B82Y 10/00 (2013.01); H01L 21/823814 (2013.01); H01L 21/823821 (2013.01); H01L 21/823878 (2013.01); H01L 27/0886 (2013.01); H01L 27/0924 (2013.01); H01L 29/06 (2013.01); H01L 29/0653 (2013.01); H01L 29/0673 (2013.01); H01L 29/0847 (2013.01); H01L 29/161 (2013.01); H01L 29/165 (2013.01); H01L 29/1608 (2013.01); H01L 29/413 (2013.01); H01L 29/42392 (2013.01); H01L 29/775 (2013.01); H01L 29/78 (2013.01); H01L 29/7851 (2013.01); H01L 29/7853 (2013.01); H01L 29/78696 (2013.01);
Abstract

A semiconductor device and a method of fabricating the same are provided. The semiconductor device comprises a first multi-channel active pattern which is defined by a field insulating layer, extends along a first direction, and includes a first portion and a second portion; a gate electrode which extends along a second direction different from the first direction and is formed on the first portion; and a first source/drain region which is formed around the second portion protruding further upward than a top surface of the field insulating layer and contacts the field insulating layer, wherein the second portion is disposed on both sides of the first portion in the first direction and is more recessed than the first portion, a top surface of the first portion and a top surface of the second portion protrude further upward than the top surface of the field insulating layer, and a profile of sidewalls of the second portion is continuous.

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