Si-Hyung Lee

Title: Si-Hyung Lee: Innovator in Semiconductor Technology

Introduction

Si-Hyung Lee is a prominent inventor based in Suwon-si, South Korea. He has made significant contributions to the field of semiconductor technology, holding a total of 8 patents. His work focuses on innovative methods and devices that enhance the performance and efficiency of semiconductor components.

Latest Patents

One of Si-Hyung Lee's latest patents is a semiconductor device and method of fabricating the same. This invention includes a first multi-channel active pattern defined by a field insulating layer, which extends along a first direction. The device comprises a gate electrode formed on a first portion of the active pattern and a first source/drain region that contacts the field insulating layer. The design features a second portion that is more recessed than the first portion, ensuring that the top surfaces of both portions protrude further than the field insulating layer. This innovative structure aims to improve the functionality and reliability of semiconductor devices.

Career Highlights

Si-Hyung Lee is currently employed at Samsung Electronics Co., Ltd., a leading company in the technology sector. His work at Samsung has allowed him to be at the forefront of semiconductor innovation, contributing to the development of advanced electronic components that are essential in modern technology.

Collaborations

Throughout his career, Si-Hyung Lee has collaborated with notable colleagues, including Yeong-Jong Jeong and Jeong-yun Lee. These collaborations have fostered a creative environment that encourages the exchange of ideas and the development of groundbreaking technologies.

Conclusion

Si-Hyung Lee's contributions to semiconductor technology exemplify the spirit of innovation. His patents and work at Samsung Electronics Co., Ltd. highlight his commitment to advancing the field and improving electronic devices. His ongoing efforts continue to shape the future of technology.