The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 25, 2010
Filed:
Jan. 04, 2008
Si-hyung Lee, Suwon-si, KR;
Sang-ryol Yang, Hwaseong-si, KR;
Myoung-bum Lee, Seoul, KR;
Ki-hyun Hwang, Seongnam-si, KR;
Si-hyung Lee, Suwon-si, KR;
Sang-ryol Yang, Hwaseong-si, KR;
Myoung-bum Lee, Seoul, KR;
Ki-hyun Hwang, Seongnam-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Provided are a semiconductor device having a buried word line structure in which a gate electrode and a word line may be buried within a substrate to reduce the height of the semiconductor device and to reduce the degradation of the oxide layer caused by chlorine ions from the application of a TiN metal gate, and a method of fabricating the semiconductor device. The semiconductor device may comprise a semiconductor substrate defined by a device isolation layer and comprising an active region including a trench and one or more recess channels, a gate isolation layer on the surface of the trench, a gate electrode layer on the surface of the gate isolation layer, and a word line by which the trench may be buried on the surface of the gate electrode layer.