Daejeon, South Korea

Jeong-Hwan Son

This inventor holds 23 USPTO granted patents, primarily in Semiconductor Fabrication. Top assignees: Lg Semicon Co., Ltd., Hyundai Electronics Industries Co. Ltd., Hynix Semiconductor Inc.. Active years: 1997-2006.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jeong-Hwan Son. Retrieved from https://idiyas.com/inventor/jeong-hwan-son

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 95.7

Average Co-Inventor Count = 1.3

ph-index = 7

Forward Citations = 193(Granted Patents)


Location History:

  • Daejeon-si, KR (1999 - 2002)
  • Taejon-shi, KR (2002)
  • Taejeon, KR (2002)
  • Daejon, KR (1997 - 2003)
  • Daejeon, KR (1999 - 2006)

Company Filing History:


Years Active: 1997-2006

Loading Chart...
Areas of Expertise:
Semiconductor Device
MOSFET
Bipolar Device
Memory Structure
CMOS
Isolation Structure
Shallow Trench Isolation
Gate Electrode
Doping
Fabrication Method
Embedded Device
LDD Device
23 patents (USPTO):Explore Patents

Title: Jeong-Hwan Son: Innovator in Semiconductor Technology

Introduction

Jeong-Hwan Son is a prominent inventor based in Daejeon, South Korea, known for his significant contributions to the field of semiconductor technology. With 23 patents credited to his name, Son's work focuses on enhancing the efficiency and performance of semiconductor devices.

Latest Patents

Among his latest innovations is the **Method of making a semiconductor device having a gate electrode with an hourglass shape**. This invention aims to reduce the short-channel effect in transistors by varying the length of the gate electrode based on different sections of the active region. By implementing this design, the effective channel length is preserved, which is crucial for the performance of the semiconductor device.

Another noteworthy patent from Son is the **Method for fabricating MOS field effect transistor**. This method outlines a comprehensive approach to create a MOSFET, starting from forming an isolation layer on a substrate to defining an active region. It involves precise steps such as ion implantation of impurities and creating sidewall spacers to enhance functionality and efficiency.

Career Highlights

Jeong-Hwan Son has honed his skills at several leading technology firms, including LG Semicon Co., Ltd. and Hyundai Electronics Industries Co., Ltd. His work at these organizations has played a critical role in advancing semiconductor research and applications.

Collaborations

Throughout his career, Son has had the opportunity to work alongside esteemed colleagues, including Jae-Gyung Ahn and Hyeong-Mo Yang. Their combined expertise has fostered a collaborative environment conducive to innovation in the field of semiconductors.

Conclusion

With a solid portfolio of patents and a career dedicated to advancements in semiconductor technology, Jeong-Hwan Son remains a key figure in the industry. His inventions not only contribute to the technological landscape but also enhance the performance and reliability of modern electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…