The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2003
Filed:
Jul. 05, 1996
Jeong-Hwan Son, Daejon, KR;
Sang-Don Lee, Choongcheongbuk-Do, KR;
Hyundai Electronics Industries Co., Ltd., Ichon-shi, KR;
Abstract
A method for fabricating a MOSFET includes a step of forming an isolation layer on an isolation region of a substrate, to thereby define an active region ion implanting As and P into the active region, and a step of forming a gate on the active region. An ion implanting step of low-concentration impurity using the gate as a mask is performed to form a low-concentration ion-implanted region in a predetermined portion of the substrate which is placed on the right and left sides of the gate. A sidewall spacer on the sides of the gate is formed, and thereafter, and ion implanting high-concentration impurity into the substrate is performed.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile