Choongcheongbuk-Do, South Korea

Sang-Don Lee

This inventor holds 6 USPTO granted patents. Top assignees: Lg Semicon Co., Ltd., Hyundai Electronics Industries Co. Ltd.. Active years: 1997-2003.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sang-Don Lee. Retrieved from https://idiyas.com/inventor/sang-don-lee-wdbnsqam

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 1.1

ph-index = 3

Forward Citations = 20(Granted Patents)


Location History:

  • Cheongju, KR (1998 - 1999)
  • Choongcheongbook-Do, KR (1999)
  • Chungcheongbuk-do, KR (1999)
  • Choongcheongbuk-Do, KR (1997 - 2003)

Company Filing History:


Years Active: 1997-2003

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6 patents (USPTO):Explore Patents

Title: The Innovative Mind of Sang-Don Lee

Introduction

Sang-Don Lee is a prominent inventor hailing from Choongcheongbuk-Do, South Korea. He has made significant strides in the field of semiconductor technology, holding a total of six patents. His innovative methods for fabricating transistors and improving semiconductor devices have made a substantial impact on the industry.

Latest Patents

One of Sang-Don Lee's latest patents is titled "Method for Fabricating MOS Field Effect Transistor." This method involves a step of forming an isolation layer on a substrate's isolation region, which defines an active region for ion implantation using arsenic (As) and phosphorus (P). The process culminates in forming a gate on the active region, followed by an ion implanting step using low-concentration impurities to create an ion-implanted region adjacent to the gate. The invention emphasizes the formation of a sidewall spacer on the gate's sides and includes a step for ion implanting high-concentration impurities into the substrate.

Another important patent by Lee is the "Method for Forming Triple Well in Semiconductor Device." This innovative technique simplifies the formation of a triple well within a semiconductor device without necessitating the removal of an anti-oxidation film. The method enhances device characteristics by reducing the removal of the field oxidation film while improving latch-up behavior and device isolation. The multi-step process encompasses the formation of conductive type dopant regions through precise ion implantation techniques.

Career Highlights

Throughout his career, Sang-Don Lee has worked with notable companies in the semiconductor industry, including LG Semicon Co., Ltd. and Hyundai Electronics Industries Co., Ltd. His experiences at these leading firms have shaped his expertise and contributed to his inventive advancements in semiconductor technologies.

Collaborations

Collaborating closely with Jeong-Hwan Son, his coworker, Sang-Don Lee has been able to push the boundaries of innovation in their field, sharing ideas and expertise that have led to groundbreaking patents and improvements in their technological pursuits.

Conclusion

Sang-Don Lee's contributions to the field of semiconductor technology and his innovative patents reflect the essence of creativity and technical skill in the realm of inventions. As he continues to develop new methods and improve existing technologies, his work promises to leave a lasting imprint on the industry and inspire future inventors.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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