The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 1999
Filed:
Mar. 05, 1997
Sang-Don Lee, Chungcheongbuk-do, KR;
LG Semicon Co., Ltd., Chungcheongbuk-do, KR;
Abstract
A method for fabricating an isolation layer in a semiconductor device, includes the steps of forming a pad oxide layer on a substrate and sequentially forming a first thin nitride layer, a polysilicon layer and a second nitride layer on the pad oxide layer; selectively and sequentially dry-etching the second nitride layer, polysilicon layer, first nitride layer and pad oxide layer to expose a portion of the substrate corresponding to a field region and to form an active region pattern; growing an oxide layer on the exposed portion of the substrate in the field region; carrying out nitridation onto the polysilicon layer to form a nitride layer on the side of the active region pattern; and performing field oxidation to form a field oxide layer in the field region.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile