The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 1998
Filed:
Dec. 27, 1996
Sang-Don Lee, Cheongju, KR;
LG Semicon Co., Ltd., Choongcheongbuk-do, KR;
Abstract
A method for fabricating an isolation layer of a semiconductor device defines an active region and an isolation region on a semiconductor substrate. An active pattern is formed on the active region of the semiconductor substrate and the active pattern includes a first insulating layer and a first oxidation stop layer formed on the first insulating layer. A first isolation layer is grown over the substrate corresponding to the isolation region and the first isolation layer is selectively etched by using the first oxidation stop layer as a mask. A sidewall spacer is formed adjacent to the active pattern including a remaining portion of the first isolation layer, and the sidewall spacer includes a second insulating layer and a second oxidation stop layer formed on the second insulating layer. A second isolation layer is grown over the substrate.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile