The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 1999
Filed:
Aug. 23, 1996
Applicant:
Inventor:
Sang-Don Lee, Choongcheongbook-Do, KR;
Assignee:
LG Semicon Co., Ltd., Cheongju, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438253 ; 438254 ;
Abstract
A method for making a cell capacitor of a semiconductor device such as a dynamic random access memory includes steps for increasing the height of a capacitor electrode. With increased height, the capacitance of the fabricated capacitor is increased while allowing high integration.
Quick Actions:
Lee, Sang-Don. (1999). Dram cell capacitor fabrication method (U.S. Patent No. 5923972). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5923972
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