The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 16, 2000
Filed:
Sep. 30, 1998
Jeong-Hwan Son, Daejon, KR;
LG Semicon Co., Ltd., Cheongju, KR;
Abstract
A semiconductor device and fabrication method therefor which improve device operation of a CMOS device. The semiconductor device and fabrication method therefor prevent the deterioration of short channel properties of a PMOS device and improve current driving capability of an NMOS device. The semiconductor device has halo impurity regions formed in either the NMOS region or the PMOS region such that a channel length of the PMOS device. Also, the source and drain regions of the PMOS device are prevented from forming deep source and drain regions, thus, preventing deterioration of the short channel properties for the PMOS device.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile