The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2002
Filed:
Apr. 21, 1999
Applicant:
Inventor:
Jeong-Hwan Son, Daejeon-si, KR;
Assignee:
LG Semicon Co., Ltd., Chungcheongbuk-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1331 ;
U.S. Cl.
CPC ...
H01L 2/1331 ;
Abstract
A method for fabricating a bipolar device, including the steps of forming an epitaxial growth retarding layer on a substrate at a predetermined angle, forming a collector layer on the substrate so that the collector layer is adjacent the epitaxial growth retarding layer and has an inclined portion formed over an edge portion of the epitaxial growth retarding layer, forming a base layer having an inclined portion on the collector layer, and forming an emitter layer on the inclined portion of the base layer.